Advances in wide band-gap semiconductors 2

Tuesday, May 30, 2023
B - Materials for energy conversion systems: fundamentals, designs, and applications B2_02 1:30 PM > 4:00 PM Advances in wide band-gap semiconductors 2 Dresde (1st floor) B - Materials for energy conversion systems: fundamentals, designs, and applications

1:30 PM 239 Effects of polishing on carrier recombination in TiO2 and SrTiO3 single crystals > M. Masashi KATO (Nagoya) 2:00 PM 1015 Defects mediated high Seebeck coefficient and power factor in transparent thermoelectric thin films > P. Peter MURMU (Lower Hutt) 2:15 PM 454 A CMOS Compatible Al/Silica Multilayer Selective Emitter for Use in A Thermophotovoltaic System for Medium Grade Waste Heat Applications > M. Maria MASOOD (Frankfurt (Oder)) 2:30 PM 57 Facial synthesis of p-p heterojunction composites: Evaluation of their electrochemical properties with photovoltaics-electrolyzer water splitting using two-electrode system > K. Karthik KANNAN (Gumi-Si) 2:45 PM 947 Ferroelectric-enhanced photoelectrodes: Improvement of photogenerated hole lifetime, population and photocurrent upon poling a ferroelectric BaTiO3 photoanode > C. Chloe FORRESTER (London) 3:00 PM 985 Giant photostrictive actuation in free-standing ferroelectric membranes > S. Saptam GANGULY (Barcelona) 3:15 PM 2229 Molybdenum oxide as alternative hole selective contact for Silicon Hetero-Junction Solar cells > S. Salvatore LA MANNA (Catania) 3:30 PM 802 Synthesis of metal-doped self-supported nickel nitride as efficient electrocatalysts for hydrogen evolution reaction > C. Chuhao LUAN (Hong Kong) 3:45 PM 2110 Linking cation site distribution to the photoelectrochemical performance of spinel ferrite photoelectrodes for green hydrogen production > A. Alexander RASHKOVSKIY (Beer-Sheva)

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