High-Mobility Electron Devices
Friday, June 2, 2023
M - Materials engineering for advanced semiconductor devices
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M17
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10:30 AM
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12:00 PM
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High-Mobility Electron Devices
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
10:30 AM
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344
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Enabling High-capacity 6G Wireless Communication: Harnessing the Potential of InP Semiconductors
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N.
Nadine
COLLAERT (Heverlee)
11:00 AM
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610
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Isolation of Bidimensional Electron Gas in AlGaN/GaN Heterojunction using C, Fe and Ar Ion Implantation
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A.
Antonino
SCANDURRA (Catania)
11:15 AM
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1939
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Fabrication of Self-aligned Quantum Well InGaAs MOSFETs for High Frequency Applications
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N.
Navya Sri
GARIGAPATI (Lund)
11:30 AM
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152
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Qualitative and quantitative defect analysis of high mobility InGaZnO oxide thin film transistor with polyimide insulator
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M.
Min Jung
KIM (Seoul)
11:45 AM
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72
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Mechanical Stress Confinement Effects on Microelectronics Reliability
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A.
Aman
HAQUE (University Park)
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