Power Devices II
Friday, June 2, 2023
M - Materials engineering for advanced semiconductor devices
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M16
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8:45 AM
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10:00 AM
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Power Devices II
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
8:45 AM
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77
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Advanced Processes for Power Devices
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W.
Werner
SCHUSTEREDER (Villach)
9:15 AM
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342
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Heteroepitaxy 3C-SiC/Si Power Devices - Key Materials Challenges
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P.
Peter
WARD (Cork)
9:30 AM
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2096
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Defect formation in 3C-SiC grown on compliance Si substrates
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S.
Simona
BONINELLI (Catania)
9:45 AM
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1911
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Impact of doping on the stress evaluation of Si/3C-SiC hetero-epitaxy
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F.
Francesco
LA VIA (Catania)
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