Power Devices II
02 June 2023
M - Materials engineering for advanced semiconductor devices
•
M16
•
08:45
>
10:00
•
Power Devices II
•
Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
08:45
•
77
•
Advanced Processes for Power Devices
>
W.
Werner
SCHUSTEREDER (Villach)
09:15
•
342
•
Heteroepitaxy 3C-SiC/Si Power Devices - Key Materials Challenges
>
P.
Peter
WARD (Cork)
09:30
•
2096
•
Defect formation in 3C-SiC grown on compliance Si substrates
>
S.
Simona
BONINELLI (Catania)
09:45
•
1911
•
Impact of doping on the stress evaluation of Si/3C-SiC hetero-epitaxy
>
F.
Francesco
LA VIA (Catania)
|