Poster session 2

• 01_1404 • 01_1404-A low-temperature route to the green synthesis of CsPbBr3 films on rigid and flexible substrates > L. Lorenzo SIRNA (Catania) • 02_1200 • 02_1200-A new Combinatorial Approach for Solution Deposition of Thin Films > N. Noy ZAKAY (Be'er Sheva) • 03_126 • 03_126-Pulsed 193 nm Excimer laser processing of 4H-SiC(0001) wafers with radiant exposure dependent “in situ” reflectivity studies for process optimization. > R. Ralph DELMDAHL (Göttingen) • 04_1026 • 04_1026-Investigation of the dopant activation in ultra-highly B-doped Si1-xGex films > K. Kiseok LEE (Seoul) • 05_1506 • 05_1506-Wet etching characteristics of poly-Si depending on the various structures for advanced 3D integrated circuits > S. Sanghyeon JI (Daejeon) • 06_1539 • 06_1539-Impact of Si3N4 stoichiometry on the formation of an AlN layer in an Al/Ti/Si3N4 thin film system during AlGaN/GaN Ohmic contact formation for HEMT device > S. Selene COLOMBO (Agrate Brianza) • 07_1159 • 07_1159-Neuromorphic Synapse Implementation using InOx Interfacial Layer in InAs Nano-Wire Field-Effect Transistor > J. Junseo LEE (Seoul) • 08_1574 • 08_1574-Symmetric nitride-based ambipolar transistors with tunable electrical properties by high electronegativity dopant > J-M. Ji-Min PARK (Daejeon) • 09_2488 • 09_2488-Fabricating Cfet Devices with Vertically Stacked P/N Si Channels Using Ge/Si 2D Epitaxy and High Ge/Si Selective Etching Ratio > C. Chu CHUN-LIN (Hsinchu) • 11_1868 • 11_1868-Electrical properties of graphene field-effect transistor (GFET) by minority carrier resistance effect of graphene > T. Taejun GU (Suwon-Si) • 13_138 • 13_138-Reliable Multiply-Accumulate Operation of a Ru/TaOx/Si:ZrOx/TiN Stacked Device > H. Hyun Kyu SEO (Seoul) • 14_149 • 14_149-Tailoring the multilevel resistive switching characteristics of hafnium oxide-based memory devices by differential work function engineering > S. Swathi S. P. (Bangalore) • 15_1626 • 15_1626-Self-assembled Tantalum oxide/2H-TaS2 as van der Waals Platform of Multilevel Memristor Circuit with ß-Ga2O3 Transistor > T. Taewook KIM (Seoul) • 16_1674 • 16_1674-Multiply-Accumulate Operation on One Selector-One Resistor(1S1R) 32 x 32 crossbar arrays > S. Su Yeon LEE (Seoul) • 17_2155 • 17_2155-Synthesis of Large-Area Monolayer MoS2 for Two-Terminal Neuromorphic Devices with Short-Term Memory > A. Asmita THOOL (Chennai) • 18_2204 • 18_2204-Transposable 1T-SRAM for neuromorphic computing > D. Doohyeok LIM (Suwon) • 19_2508 • 19_2508-Resistive switching properties of CuxO films through phase transition during low-temperature annealing > E. Eun Kyu KIM (Seoul) • 20_2514 • 20_2514-Synthesis and memristor properties of CVD grown ReS2 thin film: Change from DRAM to WORM > P. Pallavi AGGARWAL (New Delhi) • 21_772 • 21_772-Deposition of TiO2 Thin Films by Mist Chemical Vapor Deposition and Their Application to Resistive Random Access Memory > Y-Y. Yun-Yun CHENG (Kaohsiung City) • 22_1007 • 22_1007-Efficient Inverted Tandem Structure of Quantum Dot Light-Emitting Diodes with Inorganic Charge Generation Layers > K. Kwangkeun LEE (Seoul) • 23_1058 • 23_1058-Ligand exchanged highly dispersed NiO nanoparticles for hole injection layer of Quantum Dots LED > L. Lim HYOJUN (Daegu) • 24_1338 • 24_1338-Interplay between strain, Sn content and temperature in GeSn optoelectronic devices > I. Ignatii ZAITSEV (Frankfurt (Oder)) • 25_1544 • 25_1544-Investigation of Chiral Halide Perovskite/III-V LEDs with Circularly Polarized Emission > M. Matthew HAUTZINGER (Golden) • 261921 • 261921-Carrier dynamics and structural properties of hybrid orange-red LED based on In-rich InGaN/GaN multiple quantum wells > H. Hadeel ALAMOUDI (Thuwal) • 27_1926 • 27_1926-Studying the carrier dynamic of pyramid-shaped InGaN/GaN micro-light-emitting diodes (µ-LEDs) by using Time-resolved photoluminescence > F. Fatimah ALRESHIDI (Thuwal) • 28_333 • 28_333-AlxZn1-xO-based Ultraviolet Photodetectors with Tunable Cutoff Wavelength from Near-UV to Deep-UV > W-H. Wei-Han CHEN (Kaohsiung) • 29_1250 • 29_1250-Gate/Light Co-Tunable Negative Differential Resistance Behaviors and 9 by 9 Photodetectors Array from Small-Molecules Heterostructure > Y. Yunchae JEON (Seongnam-Si) • 30_1703 • 30_1703-Effect of Sn+ ion implantation and post-annealing on enhancing ß-Ga2O3– based DUV self-powered photodetector performance > K. Kishor UPADHYAYA (Thuwal) • 31_1223 • 31_1223-Photosensitive graphene field-effect transistor with porous silicon supporting layer > I. Igor OLENYCH (Lviv) • 32_834 • 32_834-Large area 4H-SiC Schottky barrier diodes as radiation detectors > T. Tihomir KNEZEVIC (Zagreb) • 33_1521 • 33_1521-Ultrafast low power room temperature H2 gas sensor based on atomically sharp nanopatterned exfoliated MoS2 flakes > A. Abhay Vivek AGRAWAL (Gothenburg) • 34_1801 • 34_1801-Mercury (II) Selective Probe by Thin Film Transistor Based on Supramolecular Flavin-Wrapped Single-Chirality Single-Walled Carbon Nanotube > D. Dong Hwan KIM (Seoul) • 35_2554 • 35_2554-A High-temperature stable Self-driven Broadband-photodetector based on MoS2/GaN Heterostructure. > P. Pargam VASHISHTHA (New Delhi) • 36_2645 • 36_2645-Exploring light trapping of nanopillar arrays decorated with self-aligned quasi-nanolenses using near-field optical microscopy > A. Ankit KUMAR (Be'er Sheva) • 37_2674 • Development of AlGaAsBi for the Next Generation of APDs > M. Matthew CARR (Sheffield) • 38_1922 • Synthesis of Pb-free Ag-Bi-based double perovskites thin films for photovoltaic applications > S. Sonia RUIZ RAGA (Bellaterra) • 40_1928 • Template synthesis and experimental-theoretical study of a new type of heterostructures > A. Alma DAULETBEKOVA (Astana) • 41_1084 • 3D-printed metasurface structure with thermal-compressed circuit patterns for phase shifter fabrication > G. Gyeongyeong LEE (Cheonan) • 42_1205 • 42_1205-Electrical Conductivity and Light Sensing based on 3D Printed Nanoporous Structures > K. Kai XIA (Karlsruhe) • 43_1373 • 43_1373-Oxide Nanopatterning using Sequential Infiltration Synthesis – In Situ FTIR study > M. Mahua BISWAS (Normal, Illinois) • 44_480 • 44_480-Development of nanoelectromechanical device based on complementary metal oxide semiconductor for three dimensional integrated associative memory-augmented neural networks > S. Sang Hyun JUNG (Suwon, Kyeonggi) • 45_876 • 45_876-Effect of stress and different crystal orientations on 3C-SiC resonator > F. Francesco LA VIA (Catania) • 46_2335 • 46_2335-Investigation of Thermal ALD deposited AlOx and HfOx bilayer films for Silicon Surface Passivation > M. Meenakshi DEVI (New Delhi) • 47_1889 • 47_1889-Design rules for selective deposition of silver by condensation coefficient modulation > S. Szymon ABRAHAMCZYK (Coventry) • 48_1716 • 48_1716-Control of interfacial reaction between high TC superconductor Tl2Ba2CaCu2O8 and topological insulator Bi2Se3 > Y-D. Yong-Duck CHUNG (Daejeon) • 49_1023 • 49_1023-Elucidating the effects of impurities on interfacial void formation of Cu and Sn-Ag electrodeposits > Y. Yugeun JO (Yeonsu-Gu, Incheon)