Silicides and Germanides III
Thursday, June 1, 2023
M - Materials engineering for advanced semiconductor devices
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M15
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3:00 PM
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4:00 PM
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Silicides and Germanides III
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
3:00 PM
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2154
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Tuning nickel silicide properties via ion implantation: the role of defects and impurities
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A.
André
VANTOMME (Leuven)
3:30 PM
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898
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Formation of the C54-TiSi2 phase using nanosecond laser annealing and RTA enhanced by amorphous silicon
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R.
Reda
GUELLADRESS (Crolles)
3:45 PM
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614
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Influence of the Si surface preparation on CoSi2 agglomeration
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A.
Andréa
NEWMAN (Marseille)
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