Simulation and Modeling III

Wednesday, May 31, 2023
M - Materials engineering for advanced semiconductor devices M10 1:30 PM > 3:00 PM Simulation and Modeling III Schuman (1st floor) M - Materials engineering for advanced semiconductor devices

1:30 PM 2698 Material Engineering for Advanced CMOS Technology > V. Victor MOROZ (Mountain View) 2:00 PM 2325 Gate-All-Around SRAM: Performance Investigation and Optimization Towards Vccmin Scaling > P. Pratik B VYAS (Santa Clara) 2:15 PM 2002 Impact of solid and liquid phase reflectivity on the ultra-fast laser melting of silicon-germanium alloys > D. Damiano RICCIARELLI (Catania) 2:30 PM 2074 Boron diffusion in germanium and the impact of oxygen > F. Felix KIPKE (Münster) 2:45 PM 623 Generation and loss of hydrogen-boron pairs in fired silicon wafers > V. Vladimir VORONKOV (Merano)

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