Substrate Technologies and Layer Synthesis II
01 June 2023
M - Materials engineering for advanced semiconductor devices
•
M13
•
10:00
>
12:00
•
Substrate Technologies and Layer Synthesis II
•
Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
10:00
•
1555
•
Strain engineering of Si/Ge heterostructures based on Ge virtual substrates
>
K.
Kentarou
SAWANO (Tokyo)
10:45
•
920
•
Synthesis of MoS2 layers by sputter deposition and pulsed laser annealing.
>
A.
Alessandro
TONON (Padova)
11:00
•
2166
•
Growth of transferable germanium membranes on porous substrate for flexible optoelectronics
>
T.
Tadeas
HANUS (Sherbrooke)
11:15
•
1337
•
Van der Waals epitaxy of CdTe on 2D surfaces
>
E.
Enguerrand
TOURARD (Grenoble)
11:30
•
2011
•
Lamellar GeP thin films: a first step on the road toward 2D-GeP
>
M.
Mathieu
STOFFEL (Nancy)
11:45
•
2197
•
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting
>
E.
Enrico
DI RUSSO (Padova)
|