Substrate Technologies and Layer Synthesis II
Thursday, June 1, 2023
M - Materials engineering for advanced semiconductor devices
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M13
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10:00 AM
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12:00 PM
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Substrate Technologies and Layer Synthesis II
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
10:00 AM
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1555
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Strain engineering of Si/Ge heterostructures based on Ge virtual substrates
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K.
Kentarou
SAWANO (Tokyo)
10:45 AM
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920
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Synthesis of MoS2 layers by sputter deposition and pulsed laser annealing.
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A.
Alessandro
TONON (Padova)
11:00 AM
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2166
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Growth of transferable germanium membranes on porous substrate for flexible optoelectronics
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T.
Tadeas
HANUS (Sherbrooke)
11:15 AM
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1337
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Van der Waals epitaxy of CdTe on 2D surfaces
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E.
Enguerrand
TOURARD (Grenoble)
11:30 AM
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2011
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Lamellar GeP thin films: a first step on the road toward 2D-GeP
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M.
Mathieu
STOFFEL (Nancy)
11:45 AM
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2197
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Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting
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E.
Enrico
DI RUSSO (Padova)
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