Applications in Advanced Devices
Wednesday, May 31, 2023
M - Materials engineering for advanced semiconductor devices
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M12
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4:30 PM
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6:30 PM
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Applications in Advanced Devices
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
4:30 PM
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844
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Back-end-of-line and flexible substrate compatible ferroelectric memories for neuromorphic computing and adaptive sensing
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S.
Sayani
MAJUMDAR (Espoo)
4:45 PM
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1029
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Indium Gallium Zinc Oxide Based Ferroelectric Thin Film Transistors for Content Addressable Memory Cell Applications
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S.
Sourav
DE (Dresden)
5:15 PM
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1114
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Impact of ferroelectricity on the electron-phonon coupling at oxide interfaces
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M.
Marius Adrian
HUSANU (Bucharest-Magurele)
5:30 PM
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1272
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Site-controlled fabrication of integrated graphene nanoribbons-based quantum dot devices using scanning probe nanopatterning
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X.
Xiao
LIU (Cambridge)
5:45 PM
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1312
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Physically Unclonable Functions Capable of Preventing Machine Learning Hacking Attacks Obtained by Disordered Interfacial-doping of Graphene Using Mixed Self-assembled Monolayers
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S.
Subin
LEE (Seongnam-Si)
6:00 PM
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1493
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New technologies for High Purity Germanium segmented detectors: from virgin crystals to innovative devices.
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S.
Stefano
BERTOLDO (Padova)
6:15 PM
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2484
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Different Schottky barriers have been obtained by varying the Schottky metal and deposition parameters
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S.
Simone
MILAZZO (Catania)
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