Applications in Advanced Devices

Wednesday, May 31, 2023
M - Materials engineering for advanced semiconductor devices M12 4:30 PM > 6:30 PM Applications in Advanced Devices Schuman (1st floor) M - Materials engineering for advanced semiconductor devices

4:30 PM 844 Back-end-of-line and flexible substrate compatible ferroelectric memories for neuromorphic computing and adaptive sensing > S. Sayani MAJUMDAR (Espoo) 4:45 PM 1029 Indium Gallium Zinc Oxide Based Ferroelectric Thin Film Transistors for Content Addressable Memory Cell Applications > S. Sourav DE (Dresden) 5:15 PM 1114 Impact of ferroelectricity on the electron-phonon coupling at oxide interfaces > M. Marius Adrian HUSANU (Bucharest-Magurele) 5:30 PM 1272 Site-controlled fabrication of integrated graphene nanoribbons-based quantum dot devices using scanning probe nanopatterning > X. Xiao LIU (Cambridge) 5:45 PM 1312 Physically Unclonable Functions Capable of Preventing Machine Learning Hacking Attacks Obtained by Disordered Interfacial-doping of Graphene Using Mixed Self-assembled Monolayers > S. Subin LEE (Seongnam-Si) 6:00 PM 1493 New technologies for High Purity Germanium segmented detectors: from virgin crystals to innovative devices. > S. Stefano BERTOLDO (Padova) 6:15 PM 2484 Different Schottky barriers have been obtained by varying the Schottky metal and deposition parameters > S. Simone MILAZZO (Catania)

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