Silicides and Germanides II
Wednesday, May 31, 2023
M - Materials engineering for advanced semiconductor devices
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M11
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3:00 PM
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4:00 PM
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Silicides and Germanides II
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
3:00 PM
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964
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Some challenges and issues for contacts formation and stability in microelectronics
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D.
Dominique
MANGELINCK (Marseille)
3:30 PM
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1332
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NiGe formation on thin Ge films by flash lamp annealing: electrical properties
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L.
Lars
REBOHLE (Dresden)
3:45 PM
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1046
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NiSi2/Si interface with segregation of one-atomic Au layer in a silicide-embeded silicon nanowires
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C-Y.
Chia-Yi
WU (Hsinchu City)
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