Simulation and Modeling IV
Thursday, June 1, 2023
M - Materials engineering for advanced semiconductor devices
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M14
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1:30 PM
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3:00 PM
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Simulation and Modeling IV
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
1:30 PM
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1168
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Multiscale simulations of critical processes for the fabrication and functionalization of nanostructures
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A.
Antonino
LA MAGNA (Catania)
2:00 PM
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1655
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Multi-Threshold Voltages Enablement Using Oxide Dipoles in WFM-Less Gate Stack for n- and p- Type GAA Devices
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P.
Priyamvada
JADAUN (Santa Clara)
2:15 PM
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2089
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A simulation workflow to couple the meso and atomistic scale for the CVD epitaxy of Si and SiGe-based structures
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G.
Giuseppe
FISICARO (Catania)
2:30 PM
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433
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Accurate and efficient 3-D analytic model of ion implantation based on Legendre polynomials
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N.
Nikolas
ZOGRAPHOS (Zürich)
2:45 PM
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1363
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TCAD process simulation of self-limiting oxidation of silicon nanowires
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C.
Chiara
ROSSI (Erlangen)
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