Metrology and Characterization II

10:00 AM • 2577 • Combining cutting-edge metrology techniques and TCAD to support device integration towards the 2nm Technological Node and Beyond > P. Pierre EYBEN (Leuven) 10:30 AM • 1933 • Scanning Spreading Resistance microscopy on dopant profiles in elemental and compound semiconductors > T. Tim BÖCKENDORF (Münster) 10:45 AM • 391 • Local Strain and Alloy Composition in Ge1-xSnx Microdisks: A Study by X-ray Nanoprobe > I. Ignatii ZAITSEV (Frankfurt (Oder)) 11:00 AM • 864 • Capacitance-Voltage Measurements on SiC-Based MOS Structures: What Information Can We Get from Them? > A. Alex BURENKOV (Erlangen) 11:15 AM • 1399 • On the bulk photovoltaic effect in non-uniformly strained Germanium > C. Costanza Lucia MANGANELLI (Frankfurt (Oder)) 11:30 AM • 1447 • Deep multi-energy proton implantation in silicon: a SIMS study > O. Orazio SAMPERI (Catania) 11:45 AM • 1713 • Photoemission Spectroscopy on photoresist materials: A useful tool to use with caution > F. Faegheh SAJJADIAN (Leuven)