Poster session 1

• 01_40 • 01_40-Defects visualization in Gallium Nitride by Scanning Transmission Electron Microscopy > C. Corrado BONGIORNO (Catania) • 02_148 • 02_148-Investigation of carrier Lifetime variation with nanopillar spacing in Si-nanopillar/SiGe composite materials for MOSFET application by laser heterodyne photothermal displacement measurements > T. Tomoki HARADA (Miyazaki) • 03_300 • 03_300-Deep Level Transient Spectroscopy-Secondary Ion Mass Spectrometry combined study of H+ irradiation effects on 4H-SiC > M. Melissa Lucia SCALISI (Catania) • 05_778 • 05_778-Super-Resolution Fluorescence Imaging for Semiconductor Nanoscale Metrology and Inspection > S. Seohyun MUN (Seoul) • 06_811 • 06_811-Band Bending and Surface Composition Analysis by Angle Resolved XPS and Their Impact on Minority Carrier Lifetime After Germanium Wet Etching > A. Alexandre CHAPOTOT (Sherbrooke) • 07_930 • 07_930-Manipulating spin texture in a hybrid nanostructure comprised of topological insulator and 2D semiconductor with varied band alignment types > C-M. Cheng-Maw CHENG (Hsinchu City) • 08_950 • 08_950-Thermal transport on few-layers Fe3GeTe2 > M. Marcel S. CLARO (Santiago De Compostela) • 09_1102 • Stress/strain-induced Raman frequency shift in Gallium Nitride (GaN) Packaged Devices > Z. Zainab DAHROUCH (Messina) • 10_1471 • Features of Ultrathin SiO2 Layers on Si and Their Physical Manifestations > K. Konstantin KONIN (Kyiv) • 11_1472 • 11_1472-4H-SiC RIE etch: Design of Experiments optimization for striations recovery by using ImageJ software > M. Matteo BARCELLONA (Catania) • 12_2639 • 12_2639-Sub-Picosecond Carrier Dynamics Explored using Automated High-Throughput Studies of Doping Inhomogeneity within a Bayesian Framework > R. Ruqaiya AL-ABRI (Manchester) • 13_355 • 13_355-Radiation-enhanced annealing of vacancy-oxygen defects in Cz n-Si: features of the experiment, factor of the radiation ionization, and a possible annealing mechanism > M. Mykola KRAS’KO (Kyiv) • 14_518 • 14_518-New states of ??2 defect in boron-doped Si > L. Lyudmila KHIRUNENKO (Kyiv) • 15_627 • 15_627-The Diffusion Behavior and Electrical Characteristics of Ru Interconnect with Polycrystalline MoS2 Diffusion Barrier > D. Dun Jie JHAN (Hsinchu, Taiwan (R.O.C.)) • 16_2411 • 16_2411-Density functional theory study of multi-interstitial defects complexes in germanium > A. Abdulgaffar ABDURRAZAQ (Toulouse) • 17_2001 • 17_2001-Gibbs free energy for MoO2Cl2 reaction on SiO2 surface by density function theory > H-K. Hyun-Kyu KIM (Cheonan) • 18_2043 • 18_2043-Two-dimensional carrier gas at a polar interface without surface band gap states: A first principles perspective > F. Federico BRIVIO (Rehovot) • 19_2095 • 19_2095-Two-dimensional van der Waals heterostructures for energy-efficient tunneling transistors > K. Konstantina IORDANIDOU (Göteborg) • 20_69 • 20_69-General Purpose Machine Learning Interatomic Potential for Silicon-Germanium > D. Diego MILARDOVICH (Vienna) • 21_2050 • 21_2050-Ab-initio study of the effects of Pb intercalation in Graphene/SiC heterostructures > S. Simone BROZZESI (Roma) • 22_1380 • 22_1380-Tuning the Schottky Contacts of graphene/phosphorene heterostructure: a DFT study > A. Alessia MURONI (Roma) • 23_893 • 23_893-TCAD modelling of a-Si:H devices for particle detection applications > D. Daniele PASSERI (Perugia) • 24_1206 • 24_1206-Post growth thermal treatments of Si1-x-yGexSny alloys > O. Oliver STEUER (Dresden) • 25_43 • 25_43-New method for the deposition of thin films on the inner walls of a deep cavity: application to germanium doping > C. Chiara CARRARO (Legnaro) • 26_1476 • 26_1476-Strained sintered mesoporous silicon epifoils for IIIV/Si integration and substrate reuse > C. Clara SANCHEZ-PEREZ (Madrid) • 28_827 • 28_827-Impact of annealing schemes on the formation and agglomeration of thin Ni(Pt)Si film for advanced 3D imagers technologies > F. Fabriziofranco MORRIS ANAK (Grenoble) • 29_2081 • 29_2081-In-situ transmission electron microscope observation of nickel metal-induced crystallization on a-Si > C-C. Chen-Chih HSIANG (Taipei) • 30_2202 • 30_2202-Study of interfaces in nickel-based silicides through a multi-level modeling strategy > C. Cesar JARA (Toulouse) • 31_189 • 31_189-Influence of the type of interlayer on current transport mechanisms and defects in n-ZnO/ZnCdO/p-Si and n-ZnCdO/ZnO/p-Si heterojunctions grown by molecular beam epitaxy > R. Radoslaw SZYMON (Wrocław) • 32_1572 • 32_1572-Phase transition control of crystalline Ga2O3 grown on sapphire (0001) by MOCVD > H-Y. Hyeong-Yun KIM (Jinju) • 33_1915 • 33_1915-Deposition of Ga2O3 and ZnGa2O4 thin films by liquid metal target sputtering > M. Martins ZUBKINS (Riga) • 35_805 • 35_805-Wafer-Scale Production of 2D SnSe: Synthetic Platform for Van der Waals Semiconductor-Based Broadband Photodetectors > H-K. Hyeong-Ku JO (Daejeon) • 36_605 • 36_605-Formation of High-k Al-doped ZrO2 Dielectric Using a New Cocktail Precursor > H. Hayeong KIM (Daejeon) • 37_1030 • 37_1030-Effect of dopant distribution on the remanent polarization of La-doped HfO2 thin films > J. Ju Young JEONG (Seoul) • 38_1019 • 38_1019-Ferroelectricity of La doped Hf0.5Zr0.5O2 Films Deposited by Atomic Layer Deposition using Supercycles > Y. Yoogeun HAN (Seodaemun-Gu) • 39_1647 • 39_1647-Oxygen Vacancy Control-mediated Ferroelectricity Enhancement in Hafnium Zirconium Oxide Via DUV Photoactivation > S. Sangwoo LEE (Gwangju) • 40_458 • 40_458-Chemical design of magnetoelectric GaFeO3 epitaxial thin films > M. Mircea NASUI (Cluj-Napoca) • 41_861 • 41_861-Engineering Transition Metal Oxide and Transition Metal Dichalcogenide Memristive Devices for Neuromorphic Systems > A. Anna LINKENHEIL (Ilmenau) • 42_113 • 42_113-Mist-CVD Deposited c-Axis Aligned Crystalline ITZO Thin Film and Its Application to Thin-Film Transistor > H-Y. Han-Yin LIU (Kaohsiung) • 43_1238 • 43_1238-A comprehensive study of the influence of various deposition parameters on the physical properties of ZnO:Al thin transparent conducting films > A. Adel Sarolta RACZ (Budapest) • 44_1103 • 44_1103-High mobility Oxide Thin Film Transistor with amorphous In-Ga-Sn-O fabricated by RF-magnetron sputtering > J. Jo HYUNIL (Korea) • 45_1125 • 45_1125-Growth Control, Optical and Structural Characterization of Layered Gallium Sulfide Films Prepared by Chemical Vapor Deposition > S. Stefano DICORATO (Bari) • 46_1992 • 46_1992-Growth of MoSe2-MoS2 core-shell in-plane heterostructure TMDs using Chemical Vapor Deposition > I. Insu LIM (Seoul) • 48_1827 • 48_1827-Photothermal reaction based Low Temperature Synthesis of Vertically Integrated Two-dimensional Heterostructure > M-J. Min-Ji JEON (Busan) • 47_2454 • 47_2454-Phase Change Sb2S3 films grown by Chemical Vapor Deposition > M. Maria Michela GIANGREGORIO (Bari) • 49_625 • 49_625-Manifestation of Eu dopants in Raman spectra and doping concentration profiles of {ZnCdO/ZnO} superlattices > I. Igor PERLIKOWSKI (Wroclaw) • 50_1441 • 50_1441-Effect of gallium doping on structural and transport properties of the Topological Insulator Bi2Se3 by molecular beam epitaxy > A. Ana PÉREZ RODRÍGUEZ (Salamanca) • 51_100 • 51_100-Extraction of single-walled carbon nanotubes of defined chirality with conjugated polymers in organic solvents > D. Dawid JANAS (Gliwice)