Silicides and Germanides I
Tuesday, May 30, 2023
M - Materials engineering for advanced semiconductor devices
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M08
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3:00 PM
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4:00 PM
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Silicides and Germanides I
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
3:00 PM
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227
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Optimization of the contact engineering processes in the frame of advanced semiconductor devices development.
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M.
Magali
GREGOIRE (Crolles Cedex)
3:30 PM
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524
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Effects of roughness variation on the electrical and structural properties of Ni silicide ohmic contacts formed by UV laser annealing
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P.
Paolo
BADALÀ (Catania)
3:45 PM
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2131
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Investigation of the formation of nickel silicides on vertical silicon nanostructured channel for advanced electronics
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J.
Jonas
MÜLLER (Toulouse)
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