Power Devices I
Tuesday, May 30, 2023
M - Materials engineering for advanced semiconductor devices
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M07
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1:30 PM
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3:00 PM
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Power Devices I
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
1:30 PM
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1508
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Virtualization of processes, metrology and maintenance for advanced SiC-based device manufacturing
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D.
Daniele
PAGANO (Catania)
2:00 PM
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1538
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Growth of thick GaN layers on Si (111) for vertical power devices
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S.
Sondre
MICHLER (Burghausen)
2:15 PM
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681
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Investigation of electron mobility in AlGaN channel heterostructures with different Al content
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J.
Julien
BASSALER (Grenoble)
2:30 PM
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1292
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Novel Energy-Filtered Field Stop Technology for IGBT Power Devices
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R.
Robert
KOCH (Jena)
2:45 PM
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932
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Single step of µs UV laser annealing for Si IGBT back-side activation
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Z.
Zeinab
CHEHADI (Gennvilliers)
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