Simulation and Modeling II

10:00 AM • 2737 • Machine-learning-assisted determination of the global zero-temperature phase diagram of materials > M. Miguel A. L. MARQUES (Bochum) 10:30 AM • 1196 • Ground and excited state properties of meta-stable allotropic forms of 2D Tellurium from first principles approaches > S. Simone GRILLO (Rome) 10:45 AM • 574 • Charged intrinsic defect states in amorphous Si3N4 > C. Christoph WILHELMER (Vienna) 11:00 AM • 710 • Multiscale modeling of ultrafast transformations and structural disorder in laser annealed SiGe nanostructures > G. Gaetano CALOGERO (Catania) 11:15 AM • 858 • Functionality of polycrystalline-Si channel: insight from first-principles and multi-scale modeling > R. Rita MAJI (Reggio Emilia) 11:30 AM • 1769 • A Multiscale Modeling Approach for Revealing Defects Relevant in Charge Trapping Related Phenomena > D. Dominic WALDHOER (Vienna) 11:45 AM • 2065 • Kinetic Monte Carlo simulations of heated boron implantation and non-melt laser annealing in Si and SiGe layers > S. Simon MUNDINAR (Erlangen)