Advanced Doping Technologies

16:30 • 2509 • Novel Processes for Advanced Nanoelectronics Devices > S. Shashank SHARMA (Sunnyvale) 17:00 • 638 • Title of abstract: Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser > R. Richard DAUBRIAC (Toulouse) 17:15 • 1027 • Study on structural and electrical properties of Si:P and Si:As films treated by RTA and NLA > K. Kihyen LEE (Seoul) 17:30 • 1171 • Sb heavy doping of Ge1-xSnx epilayers by Pulsed Laser Melting > D. Daris FONTANA (Padua) 17:45 • 1308 • Evolution of carrier mobility and carrier density of femtosecond laser sulfur hyperdoped silicon after different post-processing treatments > S. Simon PAULUS (Rüsselsheim) 18:00 • 1808 • Impact of Nanosecond Laser Annealing on the Structural and Electrical Properties of Heavily in-situ B-doped SiGe Epitaxial Films > C. Chunghee JO (Seoul) 18:15 • 926 • Phosphorus monolayers formation on Ge: towards a reliable monolayer doping > F. Francesco SGARBOSSA (Padova)