Advanced Doping Technologies
Monday, May 29, 2023
M - Materials engineering for advanced semiconductor devices
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M05
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4:30 PM
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6:30 PM
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Advanced Doping Technologies
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
4:30 PM
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2509
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Novel Processes for Advanced Nanoelectronics Devices
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S.
Shashank
SHARMA (Sunnyvale)
5:00 PM
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638
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Title of abstract: Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser
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R.
Richard
DAUBRIAC (Toulouse)
5:15 PM
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1027
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Study on structural and electrical properties of Si:P and Si:As films treated by RTA and NLA
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K.
Kihyen
LEE (Seoul)
5:30 PM
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1171
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Sb heavy doping of Ge1-xSnx epilayers by Pulsed Laser Melting
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D.
Daris
FONTANA (Padua)
5:45 PM
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1308
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Evolution of carrier mobility and carrier density of femtosecond laser sulfur hyperdoped silicon after different post-processing treatments
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S.
Simon
PAULUS (Rüsselsheim)
6:00 PM
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1808
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Impact of Nanosecond Laser Annealing on the Structural and Electrical Properties of Heavily in-situ B-doped SiGe Epitaxial Films
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C.
Chunghee
JO (Seoul)
6:15 PM
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926
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Phosphorus monolayers formation on Ge: towards a reliable monolayer doping
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F.
Francesco
SGARBOSSA (Padova)
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