Metrology and Characterization I
29 May 2023
M - Materials engineering for advanced semiconductor devices
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M04
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15:00
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16:00
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Metrology and Characterization I
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
15:00
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512
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Raman spectroscopy in Ge and GeSn: Temperature dependence
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D.
Davide
SPIRITO (Frankfurt (Oder))
15:15
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1779
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Polarized Raman scattering of epitaxially grown GeSn layers with different Sn contents
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A.
Agnieszka Anna
CORLEY-WICIAK (Frankfurt (Oder))
15:30
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526
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Coupling X-ray Beam Induced Current and X-ray Diffraction Imaging to characterize diamond plates used as semiconductor-based detectors
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F.
Fabien
LAFONT (Grenoble)
15:45
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1522
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X-ray Nanobeam Mapping of Lattice Strain Modulations from CMOS-Processed TiN Gate Electrodes for Quantum Technologies
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C.
Cedric
CORLEY-WICIAK (Frankfurt(Oder))
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