Substrate Technologies and Layer Synthesis I
Monday, May 29, 2023
M - Materials engineering for advanced semiconductor devices
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M03
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1:30 PM
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3:00 PM
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Substrate Technologies and Layer Synthesis I
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
1:30 PM
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188
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New Substrate Materials for Advanced Electronic Devices
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I.
Ionut
RADU (Bernin)
2:00 PM
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198
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Low temperature epitaxial SiGe:P for gate-all-around(GAA) nMOS devices
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Y.
Yuta
FUJIMOTO (Leuven)
2:15 PM
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622
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Deposition of Zr0.05Sn0.95O2 Thin Film using Mist Chemical Vapor Deposition and Its Application to Thin-Film Transistor
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M-Y.
Meng-Yu
HSU (Kaohsiung City)
2:30 PM
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1129
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CVD-Growth of Tellurium-Based 2D Materials
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S.
Sara
GHOMI (Agrate Brianza (Mb))
2:45 PM
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360
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Direct growth of wafer-scale self-separated GaN on reusable two-dimensional material substrate
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C-H.
Chang-Hsun
HUANG (Taipei)
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