Simulation and Modeling I
Monday, May 29, 2023
M - Materials engineering for advanced semiconductor devices
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M02
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10:30 AM
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12:00 PM
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Simulation and Modeling I
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Schuman (1st floor)
M - Materials engineering for advanced semiconductor devices
10:30 AM
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1974
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Modelling of Interfaces and Surface reactions
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M.
Michael
NOLAN (Cork)
11:00 AM
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1417
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First Principles Calculation of Alloy Scattering Parameters and their Effect on the Mobility of GeSn
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K.
Kevin
SEWELL (Cork)
11:15 AM
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1551
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Metal-Dielectric Adhesion Improvement Using Germanium Incorporation
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E.
El Mehdi
BAZIZI (Santa Clara)
11:30 AM
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1830
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Electronic properties of interstitial atom clusters in silicon and their impact on devices
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A.
Antoine
JAY (Toulouse)
11:45 AM
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2168
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Variability in Si Spin Qubits Due to Disordered Si/SiO2 Interfaces
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L.
Lukas
CVITKOVICH (Vienna)
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